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PolarHVTM Power MOSFET
Avalanche Rated Fast Instrinsic Diode
Preliminary Data Sheet
Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md FC Weight Test Conditions TJ = 25C to 150C
IXFH 26N50P IXFV 26N50P IXFV 26N50PS
VDSS ID25 trr
RDS(on)
= =
500 V 26 A 230 m 200 ns
Maximum Ratings 500 500 30 40 26 78 26 40 1.0 10 400 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns W C C C C C
TO-247 (IXFH)
TJ = 25C to 150C; RGS = 1 M Continuos Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150C, RG = 4 TC = 25C
D (TAB)
PLUS220 (IXFV)
G D S D (TAB)
PLUS220SMD (IXFV_S)
1.6 mm (0.062 in.) from case for 10 s Plastic body Mounting torque Mounting force (TO-247) (PLUS220SMD)
300 260
G S G = Gate S = Source D (TAB) D = Drain TAB = Drain
1.13/10 Nm/lb.in. 11..65/2.5..15 6 5 N/lb g g
TO-3P PLUS220 & PLUS220SMD
Symbol Test Conditions (TJ = 25C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 A VDS = VGS, ID = 4 mA VGS = 30 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125C
Characteristic Values Min. Typ. Max. 500 3.0 5.0 100 25 250 230 V V nA A A m
Features International standard packages Fast intrinsic diode Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages Easy to mount Space savings High power density
VGS = 10 V, ID = 0.5 ID25 Pulse test, t 300 s, duty cycle d 2 %
(c) 2005 IXYS All rights reserved
DS99276A(09/05)
IXFH 26N50P
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) Min. Typ. Max. 16 26 3600 VGS = 0 V, VDS = 25 V, f = 1 MHz 370 57 20 VGS = 10 V, VDS = 0.5 ID25 RG = 4 (External) 25 58 20 60 VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 20 25 0.31 0.21 S pF pF pF ns ns ns ns nC nC nC K/W K/W
Dim. A A1 A2 b b1 b2 C D E e L L1 P Q R S
1 2 3
IXFV 26N50P IXFV 26N50PS
TO-247 AD (IXFH) Outline
gfs Ciss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK
VDS = 20 V; ID = 0.5 ID25, pulse test
Terminals: 1 - Gate 2 - Drain 3 - Source Tab - Drain
Millimeter Min. Max. 4.7 2.2 2.2 1.0 1.65 2.87 .4 20.80 15.75 5.20 19.81 3.55 5.89 4.32 6.15 5.3 2.54 2.6 1.4 2.13 3.12 .8 21.46 16.26 5.72 20.32 4.50 3.65 6.40 5.49 BSC
Inches Min. Max. .185 .087 .059 .040 .065 .113 .016 .819 .610 0.205 .780 .140 0.232 .170 242 .209 .102 .098 .055 .084 .123 .031 .845 .640 0.225 .800 .177 .144 0.252 .216 BSC
Source-Drain Diode Symbol IS ISM VSD t rr QRM Test Conditions VGS = 0 V Repetitive
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 26 104 1.5 300 3.3 A A V ns C
L1
IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = 25A, -di/dt = 100 A/s VR = 100V
PLUS220 (IXFV) Outline
E E1 L2 A A1 E1
D1 D
L3
PLUS220SMD (IXFV_S) Outline
E E1 L2 A A1 E1
L
3X b
c A2
D A3 L3 L L1 2X b e c A2 L4
Terminals: 1 - Gate 3 - Source
2 - Drain TAB - Drain
A A1 A2 A3 b c D D1 E E1 e L L1 L2 L3 L4
2X e
Terminals: 1 - Gate 3 - Source
2 - Drain TAB - Drain
A A1 A2 b c D D1 E E1 e L L1 L2 L3
5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117
IXFH 26N50P
Fig. 1. Output Characteristics @ 25C
30 27 24 21 VGS = 10V 7V 6V 50 60 VGS = 10V
IXFV 26N50P IXFV 26N50PS
Fig. 2. Extended Output Characteristics @ 25C
7V
I D - Amperes
18 15 12 9 6 3 0 0 1 2 3 4 5 6 7 8 5V 4.5V 5.5V
I D - Amperes
40 6V 30
20 5.5V 10 5V
0 0 3 6 9 12 15 18 21 24 27 30
V D S - Volts Fig. 3. Output Characteristics @ 125C
30 27 24 VGS = 10V 7V 6V 5.5V 3.1 2.8 VGS = 10V
V D S - Volts Fig. 4. RDS(on) Norm alized to 0.5 ID25 Value vs. Junction Tem perature
I D - Amperes
21 18 15 12 9 6 3 0 0 2 4 6 8 10 12
R D S ( o n ) - Normalized
2.5 2.2 1.9 1.6 1.3 1 0.7 0.4 I D = 13A I D = 26A
5V
4.5V
14
16
18
20
-50
-25
0
25
50
75
100
125
150
V D S - Volts Fig. 5. RDS(on) Norm alized to 0.5 ID25 Value vs. ID
3.4 3 VGS = 10V TJ = 125C 27 24 21 2.6 2.2 1.8 1.4 6 1 0.6 0 5 10 15 20 25 30 35 40 45 50 55 60 TJ = 25C 3 0 -50 -25
TJ - Degrees Centigrade Fig. 6. Drain Current vs. Case Tem perature
R D S ( o n ) - Normalized
I D - Amperes
18 15 12 9
0
25
50
75
100
125
150
I D - Amperes
TC - Degrees Centigrade
(c) 2005 IXYS All rights reserved
IXFH 26N50P
Fig. 7. Input Adm ittance
40 35 30 55 50 45 40 TJ = -40C 25C 125C
IXFV 26N50P IXFV 26N50PS
Fig. 8. Transconductance
g f s - Siemens
I D - Amperes
25 20 15 TJ = 125C 10 5 0 3.5 4 4.5 5 5.5 6 6.5 25C -40C
35 30 25 20 15 10 5 0 0
5
10
15
20
25
30
35
40
45
V G S - Volts Fig. 9. Source Current vs. Source-To-Drain Voltage
70 60 50 10 9 8 VDS = 250V I D = 13A I G = 10mA
I D - Amperes Fig. 10. Gate Charge
I S - Amperes
7
VG S - Volts
TJ = 125C TJ = 25C 0.4 0.5 0.6 0.7 0.8 0.9 1
40 30 20 10 0
6 5 4 3 2 1 0 0 10 20 30 40 50 60 70 80 90 100
V S D - Volts Fig. 11. Capacitance
10000 100
Q G - nanoCoulombs Fig. 12. Forw ard-Bias Safe Operating Area
R DS(on) Limit
Capacitance - picoFarads
C iss
I D - Amperes
1000
25s 100s 1ms 10ms
10
C oss 100
TJ = 150C f = 1MHz 10 0 5 10 15 20 25 30 35 40 C rss 1 10 TC = 25C
DC
100
1000
V D S - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
V D S - Volts
IXFH 26N50P
IXFV 26N50P IXFV 26N50PS
Fig. 13. Maxim um Transient Thermal Resistance
1.00
R ( t h ) J C - C / W
0.10
0.01 0.1 1 10 100 1000
Pulse Width - milliseconds
(c) 2005 IXYS All rights reserved

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